Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

Autor:	Ian Zachary Wilcox, Dolores A. Black, William H. Robinson, Jeffrey D. Black, Daniel B. Limbrick
Rok vydání:	2015
Předmět:	Combinational logic Nuclear and High Energy Physics Soft error Nuclear Energy and Engineering Computer science Double exponential function Semiconductor device modeling Electronic engineering Waveform Node (circuits) Electrical and Electronic Engineering Capacitance Event (probability theory)
Zdroj:	IEEE Transactions on Nuclear Science. 62:1540-1549
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2015.2449073
Popis:	Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. The parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db5eba5885e0cd31391b629d163ff9ef https://doi.org/10.1109/tns.2015.2449073 Zobrazit plný text záznamu