The effect of high-dose nitrogen plasma immersion ion implantation on silicone surfaces
| Autor: | Imad F. Husein, Chung Chan, Paul K. Chu, Shu Qin |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Acoustics and Ultrasonics
Silicon Scanning electron microscope Analytical chemistry chemistry.chemical_element Condensed Matter Physics Plasma-immersion ion implantation Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Ion implantation Silicone X-ray photoelectron spectroscopy chemistry Inductively coupled plasma Fourier transform infrared spectroscopy |
| Zdroj: | Journal of Physics D: Applied Physics. 33:2869-2874 |
| ISSN: | 1361-6463 0022-3727 |
| Popis: | The effect of plasma immersion ion implantation (PIII) treatment on silicone surfaces was investigated by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR-ATR), and scanning electron microscopy (SEM). Low-energy (at voltages of 4 and 8 kV) and high-fluence (8 × 10 17 cm −2 ) implantation of nitrogen was performed using an inductively coupled plasma source (ICP) at low pressure (∼0.03 Pa). The IR absorption spectra showed a significant decomposition in the CH3, Si-CH3, and C-F groups of the silicone surface after PIII treatment. The percentage of decomposition was dependent on the implantation energy. The XPS C 1s spectra of the PIII modified surfaces showed an increase in the polar carboxyl (O-C=O) groups and a decrease in the CF3 groups. PIII treatment shifted the XPS Si 2p peak of silicone to a higher binding energy (around 103.2 eV) and the N 1s peak to lower binding energy (around 398.5 eV). The modified Si 2p, N 1s, and O 1s spectra suggest the formation of SiOx phases, silicon oxynitrides, and silicon nitrides on the silicone surface after PIII treatment. |
| Databáze: | OpenAIRE |
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