Charge Collection and Charge Sharing in a 130 nm CMOS Technology
| Autor: | Ronald D. Schrimpf, Michael L. Alles, O.A. Amusan, Lloyd W. Massengill, A.L. Sternberg, Arthur F. Witulski, P.R. Fleming, Bharat L. Bhuva, Jeffrey D. Black |
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| Rok vydání: | 2006 |
| Předmět: |
Nuclear and High Energy Physics
Engineering business.industry Bipolar junction transistor Electrical engineering Charge (physics) Hardware_PERFORMANCEANDRELIABILITY Charge sharing PMOS logic Nuclear Energy and Engineering CMOS Single event upset Node (circuits) Electrical and Electronic Engineering business NMOS logic |
| Zdroj: | IEEE Transactions on Nuclear Science. 53:3253-3258 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.2006.884788 |
| Popis: | Charge sharing between adjacent devices can lead to increased Single Event Upset (SEU) vulnerability. Key parameters affecting charge sharing are examined, and relative collected charge at the hit node and adjacent nodes are quantified. Results show that for a twin-well CMOS process, PMOS charge sharing can be effectively mitigated with the use of contacted guard-ring, whereas a combination of contacted guard-ring, nodal separation, and interdigitation is required to mitigate the NMOS charge sharing effect for the technology studied |
| Databáze: | OpenAIRE |
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