Submicron MOSFET Fabrication With X-Ray Lithography

Autor:	R. P. Jaeger, H. Nakano, M. Karnezos
Rok vydání:	1985
Předmět:	Fabrication Materials science Resist business.industry MOSFET Optoelectronics Field-effect transistor Nanotechnology X-ray lithography business Lithography Subthreshold slope Threshold voltage
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.947488
Popis:	X-ray lithography has been applied in a single-layer resist process to fabricate n-channel enhancement field-effect transistors with effective channel lengths (L eff ) and channel widths (We ff ) as small as small as 0.9 Lim and 0.5 Lim, respectively. The yields on 3" wafers ranged from as high as 50 % for the smallest MOSFETs with L eff /W eff of 0.9/0.5 to above 90% for those with Leff/Weff of 2.2/0.5 and 0.9/1.7 without process optimization. This report outlines the mask technology and the device fabrication process. The MOSFET performance is discussed with emphasis on threshold voltage and subthreshold slope uniformity and on wafer-to-wafer variations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db52a844c5013e28959857081525fc42 https://doi.org/10.1117/12.947488 Zobrazit plný text záznamu