Defect creation via dissociative recombination of ionic centers in solid Ne matrices
Autor: | Elena V. Savchenko, S. A. Uyutnov, M. A. Bludov, I. V. Khyzhniy, Vladimir E. Bondybey, G. B. Gumenchuk |
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Rok vydání: | 2016 |
Předmět: |
Nuclear and High Energy Physics
Photoluminescence Chemistry Ionic bonding Cathodoluminescence 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Charged particle 0104 chemical sciences Ion Atomic physics 0210 nano-technology Spectroscopy Instrumentation Dissociative recombination Exoelectron emission |
Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 374:35-39 |
ISSN: | 0168-583X |
DOI: | 10.1016/j.nimb.2015.08.042 |
Popis: | Recombination of the intrinsic ionic centers Ne2+ (self-trapped holes) with the detrapped electrons in solid Ne matrices and relaxation channels have been studied. The experiments were performed employing combination of the cathodoluminescence (CL) with current and optical activation spectroscopy techniques. CL spectra were recorded simultaneously in the VUV and visible range. Yields of spectrally resolved thermally and photon-stimulated luminescence (TSL, PSL) and thermally and photon-stimulated exoelectron emission (TSEE, PSEE) were measured in the time-correlated manner. It was found that the recombination reaction proceeds with irreversible dissociation of the transient Ne2∗∗ centers and the dissociative recombination (DR) products exit the matrix cage. Products of the DR reaction are found to be in 3s and 3p states. The detection of “defect” components in the TSL and PSL points to the defect formation via DR in Ne matrices. The temperature range of the electron traps stability is elucidated. A long-lasting “afteremission” of electrons and afterglow of VUV photons observed on switching off the irradiation suggest the accumulation of the uncompensated negative charge. |
Databáze: | OpenAIRE |
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