| Autor: |
Cong-Son Trinh, Phillip Czeslaw Jozwiak, Cornelius Christian Russ, Markus Paul Josef Mergens, John Armer, Russell Mohn, B. Keppens, K. Verhaege |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Device and Materials Reliability. 5:532-542 |
| ISSN: |
1530-4388 |
| DOI: |
10.1109/tdmr.2005.853510 |
| Popis: |
A novel diode-triggered silicon-controlled rectifier (DTSCR) (Mergens et al., 2003) electrostatic discharge (ESD) protection element is introduced for low-voltage application (signal and supply voltages /spl les/ 1.8 V) with extremely narrow ESD design margins. Trigger-voltage engineering in conjunction with fast and efficient SCR voltage clamping is applied for the protection of ultrasensitive circuit nodes, such as SiGe heterojunction bipolar transistor (HBT) base regions (e.g., f/sub Tmax/=45 GHz in BiCMOS 0.35-/spl mu/m LNA input) and thin gate oxides (e.g., t/sub ox/=1.7 nm in CMOS 0.09-/spl mu/m high-speed input). Ultrathin gate protection requires a reinforced trigger diode chain to avoid SCR trigger-speed issues resulting in critical trigger-voltage overshoots for very fast ESD transients such as a charged device model (CDM). SCR integration can be realized based on parasitic n-p-n/p-n-p inherent to CMOS devices or can alternatively be implemented based on vertical high-speed SiGe HBT with adjacent p+ SCR anode. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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