| Popis: |
The temperature dependence of the electrical resistivity and the magnetic susceptibility has been investigated for the compounds UAl2, UAl3 and the isostructural compounds UX3 (X=Ga, In, Si, Ge, Sn), and finally for UAl4 and UGa2. The influence of a variable U concentration has been studied for the pseudobinary compounds U1−xYxAl2 and U1−xYxGa2. The results are discussed in terms of a localized‐spin‐fluctuations model. The differences and the similarities between the electrical properties of these U compounds and Ce compounds, such as CeAl2 and CeAl3, are briefly discussed. |
