Reduction of Threshold Voltage Shift by Bias Annealing of Hydrogenated Amorphous Silicon Thin Film Transistors

Autor:	S. C. Deane, W. I. Milne, M. J. Powell
Rok vydání:	1991
Předmět:	Amorphous silicon chemistry.chemical_compound Materials science chemistry Condensed matter physics Band gap Thin-film transistor Annealing (metallurgy) Nanocrystalline silicon Deep state Bias stress Threshold voltage
Zdroj:	MRS Proceedings. 219
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-219-333
Popis:	We show that bias annealing modifies the rate of threshold voltage shift under bias stress in the regime where state creation dominates. Previously we have shown that the deep state distribution near the interface of a-Si:H TFTs can be altered by bias annealing. In particular the energy position of the defects can be made high or low in the energy gap, consistent with the defect pool model.In this paper, we relate the kinetics of new state creation at room temperature to a particular equilibrated defect distribution. In particular we show that the rate of state creation can be reduced by prior bias annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db3c6469d91f86b7a49510dd1b98f862 https://doi.org/10.1557/proc-219-333 Zobrazit plný text záznamu Full text from SpringerLink