X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation
| Autor: | Hirotatsu Ishii, Hideo Ohno, A. Ishii, Hiroyuki Hasegawa |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
Anodizing business.industry Analytical chemistry X-ray Oxide General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Electron spectroscopy Surfaces Coatings and Films chemistry.chemical_compound Semiconductor chemistry X-ray photoelectron spectroscopy Spectroscopy business Indium |
| Zdroj: | Applied Surface Science. :390-394 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(89)90089-5 |
| Popis: | An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al 2 O 3 /native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii). |
| Databáze: | OpenAIRE |
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