Amorphous Si-rich tungsten silicide with a low work function near the conduction band edge of Si
| Autor: | Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Passivation Annealing (metallurgy) Schottky barrier General Engineering General Physics and Astronomy chemistry.chemical_element Schottky diode 02 engineering and technology Tungsten 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid chemistry.chemical_compound chemistry 0103 physical sciences Silicide Work function 0210 nano-technology |
| Zdroj: | Applied Physics Express. 13:061005 |
| ISSN: | 1882-0786 1882-0778 |
| DOI: | 10.35848/1882-0786/ab8d49 |
| Popis: | The capacitance–voltage characteristics of MOS capacitors and ab initio theoretical calculations revealed that an amorphous film composed of WSin clusters (n = 6−12) had a low effective work function of 4.0 eV on SiO2 with excellent thermal stability up to 600oC. In Si Schottky diodes with WSin insertion, the electron Schottky barrier height (SBH) was 0.58 eV for n = 6 and reduced to 0.45 eV when n = 12. The n-dependency of SBH was attributed to the surface passivation of WSin becoming more effective as n increased, with annealing leading to a lower value of 0.32 eV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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