Room Temperature Electrostatic Across the Interface in Nanostructured ZnO/La $_{0.7}$Sr$_{0.3}$ MnO$_{3}$/SNTO Heterostructure

Autor:	Sanjay Kansara, Nikesh A. Shah, D. G. Kuberkar, Ram Janay Choudhary, Uma Khachar, D. M. Phase, P.S. Solanki
Rok vydání:	2013
Předmět:	Nanolithography Materials science Condensed matter physics Electric field Wide-bandgap semiconductor Field effect Heterojunction Electrical and Electronic Engineering Epitaxy Manganite Computer Science Applications Pulsed laser deposition
Zdroj:	IEEE Transactions on Nanotechnology. 12:915-918
ISSN:	1941-0085 1536-125X
DOI:	10.1109/tnano.2013.2277548
Popis:	PLD grown ZnO/La0.7Sr0.3MnO3/SrTi0.998Nb0.002O3 nanostructured heterostructure has been studied for its nanoelectronic properties at room temperature under zero applied field. XRD φ-scan reveals the epitaxial growth of La0.7Sr0.3MnO3 (LSMO) film, while the transport of 10-nm LSMO manganite layer can be tuned with applied electric field using various field effect configurations. 10-nm LSMO layer shows a large change in resistance with the application of voltage, i.e., exhibiting colossal electroresistance (CER) ~100% (negative) and large positive electroresistance (ER) ~2683% under 4.5 V at room temperature. The variation scenario in 10-nm LSMO transport has been discussed on the basis of electric-field-induced modifications in the charge carrier density and electronic states.
Databáze:	OpenAIRE
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