Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

Autor:	Daire J. Cott, Andreas Schulze, Robert Langer, Geert Eneman, Liesbeth Witters, Bastien Douhard, Hiroaki Arimura, Roger Loo, Nadine Collaert, Dan Mocuta, W. Vanherle, Paola Favia, Jerome Mitard, O. Richard, Geoffrey Pourtois
Rok vydání:	2018
Předmět:	010302 applied physics Materials science Passivation business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Fin (extended surface) 0103 physical sciences Optoelectronics 0210 nano-technology business
Zdroj:	ECS Journal of Solid State Science and Technology. 7:P66-P72
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0191802jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db03f7900931f38ad8b7c9125c1d8adb https://doi.org/10.1149/2.0191802jss Zobrazit plný text záznamu