Fabrication of crystal-facet mirrors for short cavity lasers by selective InP epitaxy on etched sidewalls

Autor:	M. Gotoda, H. Sugimoto, T. Isu, M. Nunoshita
Rok vydání:	2002
Předmět:	Materials science Laser diode business.industry Laser Epitaxy Semiconductor laser theory law.invention chemistry.chemical_compound Optics chemistry law Indium phosphide Optoelectronics Wafer Dry etching Reactive-ion etching business
Zdroj:	Seventh International Conference on Indium Phosphide and Related Materials.
DOI:	10.1109/iciprm.1995.522077
Popis:	Crystal facets of InP for the reflection mirrors of short cavity laser diodes were successfully fabricated by a novel wafer process without use of cleavage. Selective InP epitaxial growth on sidewalls formed by dry etching was realized as vertical and smooth facets from crystal facets formed by cleavage. A grown facets short cavity laser diode (GFS-LD) with the facet mirrors was proposed and the characteristics were estimated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db012cf6c0517a57a100b84065357cc4 https://doi.org/10.1109/iciprm.1995.522077 Zobrazit plný text záznamu