Comparison of ZnO-Based JFET, MESFET, and MISFET

Autor:	Marius Grundmann, H. von Wenckstern, Michael Lorenz, Heiko Frenzel, Friedrich-Leonhard Schein, Fabian J. Klüpfel
Rok vydání:	2013
Předmět:	Materials science business.industry Transistor Wide-bandgap semiconductor Electrical engineering Field effect JFET Electronic Optical and Magnetic Materials law.invention Semiconductor law Optoelectronics MESFET Electrical and Electronic Engineering business MISFET Extrinsic semiconductor
Zdroj:	IEEE Transactions on Electron Devices. 60:1828-1833
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2013.2257173
Popis:	We compare key properties of zinc oxide (ZnO)-based junction field-effect transistors (JFETs), metal-semiconductor field-effect transistors (MESFETs), and metal-insulator-semiconductor field-effect transistors (MISFETs) prepared from a common ZnO:Mg thin film. The JFETs are fabricated with a ZnCo2O4-gate, the MESFETs with reactively sputtered Pt-gate and the MISFETs with WO3 as gate insulator. The three FET types are compared with regarding dc characteristics, frequency dependence, and stability at temperatures up to 150°C. All devices can be switched within a similar gate voltage range of less than 3 V, making a direct comparison of the device characteristics possible. Measurements above room temperature show a common shift of the transfer curves to higher gate voltages, which seems to be a distinguishing property of ZnO compared with other semiconductors. All electric measurements show major differences between the devices, which can be attributed to the different gate structures.
Databáze:	OpenAIRE
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