Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxy
| Autor: | R A Stradling, Ian T. Ferguson, Y B Li, R Zallen |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Condensed matter physics Phonon Chemistry Doping Low frequency Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Materials Chemistry symbols Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering Raman spectroscopy Inorganic compound Raman scattering Plasmon Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 7:1149-1154 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/9/002 |
| Popis: | Raman scattering by coupled plasmon-phonon modes is studied with Si-doped InAs epilayers grown by MBE with carrier concentrations from 7.5*1017 cm-3 to 4*1019 cm-3. Unexpectedly, an unscreened LO line is observed throughout the whole carrier concentration range together with a low frequency (L-) line arising from wavevector dependent LO phonon-plasmon coupling. The frequency of the L- branch lies between the LO and TO phonon frequencies and approaches the TO frequency asymptotically from the high-frequency side as the carrier concentration increases. This behaviour is attributed to competition between screening (dominant in the high-density limit) and large-wavevector induced decoupling. The L+ branch of the plasmon-phonon system is observed for the first time in Raman experiments with InAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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