Physics of switching and memory effects in chalcogenide glassy semiconductors

Autor:	K. D. Tsendin, N. A. Bogoslovskiy
Rok vydání:	2012
Předmět:	Physics Phase transition business.industry Chalcogenide Nanotechnology Condensed Matter Physics Engineering physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Non-volatile memory chemistry.chemical_compound Semiconductor chemistry business
Zdroj:	Semiconductors. 46:559-590
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782612050065
Popis:	Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains unclear. Recent interest in this problem is caused by active developments of a new generation nonvolatile memory based on the chalcogenide glass-crystal phase transition. In this paper, we review the main experimental features of switching and memory effects, review and analyze the models of the switching effect. Consider the main characteristics of phase-change memory cells made of various materials. On these grounds, the main advantages of modern phase-change memory cells are presented in comparison with first-generation memory elements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dadf6d211503b36fa367c245170a4c36 https://doi.org/10.1134/s1063782612050065 Zobrazit plný text záznamu Plný text ve formátu PDF