| Autor: |
Bal Chand Nagar, M.W. Akram, Dipak Kumar Singh |
| Rok vydání: |
2021 |
| Předmět: |
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| DOI: |
10.21203/rs.3.rs-781362/v1 |
| Popis: |
In this paper, an n-channel junctionless FET (JLFET) based on SOI with a buried metal fin (BMF) is presented. We show that the BMF of suitable workfunction of the proposed device BMF-SOI-JLFET can control the channel electrostatic field by employing Schottky junction effectively. The enhanced association of potential between BMF and the channel combined with gate electric field makes it worthy for multi-threshold and dynamic threshold (DT) operation. Additionally, the biasing of BMF projects the broad range of threshold voltage (VTH) regulation with a high value of body factor (γ). The proposed device demonstrates γ enhancement compared to fin body (FB)-JLFET and conventional SOI-JL FET under identical conditions due to constant potential coupling. The DT mode of operation shows a 73% improvement in ON-state current in addition to reduced subthreshold swing contrast to BMF-SOI-JLFET without DT. This paper imparts a viable option for low power applications with multi-threshold operation and high switching speed applications with DT operation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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