Electrical properties of MIS structures with silicon nanoclusters
| Autor: | Taras Shevchenko, V. Lashkaryov, V. V. Ilchenko |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Dynamic random-access memory
Materials science Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Nanoclusters chemistry law Dielectric layer Optoelectronics Electric properties Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Physics Quantum Electronics and Optoelectronics. 14:241-246 |
| ISSN: | 1605-6582 1560-8034 |
| Popis: | The theoretical and experimental investigations of electrical properties of the Al-SiO2- -SiO ( ncs Si − 2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2- ( ) ncs Si − -SiO2-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiO ncs Si− 2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|