Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies of 31.5 % and 35.4 %
| Autor: | Rienäcker, M., Schnabel, M., Warren, E., Merkle, A., Schulte-Huxel, H., Klein, T.R., Van Hest, M.F.A.M., Steiner, M.A., Geisz, J., Kajari-Schröder, S., Niepelt, R., Schmidt, J., Brendel, R., Stradins, P., Tamboli, A., Peibst, R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20172017-1ap.1.2 |
| Popis: | 33rd European Photovoltaic Solar Energy Conference and Exhibition; 1-4 The theoretical efficiency limit of 29.4 % for single-junction crystalline Silicon (c-Si) solar cells is an insurmountable barrier that is being steadily approached within the last decades. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP//Si dual-junction cell with an in-house measured efficiency of 31.5 % and a GaInP/GaAs//Si triple-junction cell with a certified efficiency of 35.4±0.5 % |
| Databáze: | OpenAIRE |
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