Low temperature time of flight mobility measurements on synthetic single crystal diamond
| Autor: | Paul J. Sellin, S. Gkoumas, Annika Lohstroh |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Electron mobility
Drift velocity Synthetic diamond Phonon scattering Chemistry Scattering Mechanical Engineering Analytical chemistry Diamond General Chemistry engineering.material Molecular physics Electronic Optical and Magnetic Materials law.invention Time of flight law Materials Chemistry engineering Charge carrier Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 18:1338-1342 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2009.07.006 |
| Popis: | We study the temperature dependence of low charge injection drift mobility in single crystal (SC) diamond using an alpha particle source. We present time of flight (ToF) mobility measurements to investigate the charge carrier scattering mechanisms in SC synthetic diamond in the temperature range 200 K–300 K. We have used a gold contacted pad detector, with a “sandwich” contact structure, fabricated using a SC chemical vapour deposition (CVD) diamond synthesised by Element Six Ltd. ToF analysis of alpha particle induced current pulses shows a strong increase in hole mobility at reduced temperatures, consistent with acoustic phonon scattering processes dominating the charge carrier transport. On the other hand, electron mobility values appear to remain relatively constant with lower temperatures suggesting different mechanisms than optical or acoustic phonon scattering limiting the charge transport. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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