| Autor: |
Wenjun Liu, Deliang Zhu, Mingzhi Fang, Shun Han, Ming Fang, Wangying Xu, Qin Su, Dnyandeo Pawar, Youming Lu, Peijiang Cao |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Journal of Alloys and Compounds. 889:161599 |
| ISSN: |
0925-8388 |
| DOI: |
10.1016/j.jallcom.2021.161599 |
| Popis: |
ZnO:Al (AZO) and a-Ga2O3 thin films were successively deposited on a sapphire substrate by magnetron sputtering and the photoelectric properties of AZO/a-Ga2O3 heterojunction vertical structure to solar blind ultraviolet light were investigated. The device shows a high photo-to-dark current ratio (2.2 × 103), low dark current (11.4 nA), large responsivity (67.26 A/W) and fast response and recovery times of 1.53 μs and 2.25 ms under 254 nm light illumination at 10 V. Additionally, the device exhibits an obvious self-powered effect with light-dark current ratio (183.3) and the responsivity (2.92 × 10−2 A/W) at 0 V. The high response is attributed to the separation of photogenerated electron-hole pairs due to built-in field in the depletion width of AZO and Ga2O3. The analysis shows that there exists a quasi-Zener tunneling internal gain mechanism, which increases the performance of the device. The comprehensive performance of the device implied a wide potential in optoelectronics applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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