Real-time in situ crystallization and electrical properties of pulsed laser deposited indium oxide thin films
| Autor: | Ralf Brüning, F.O. Adurodija, Lynne Semple |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Annealing (metallurgy) Metals and Alloys Oxide Analytical chemistry Mineralogy Surfaces and Interfaces Atmospheric temperature range Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid Pulsed laser deposition chemistry.chemical_compound chemistry Electrical resistivity and conductivity law Materials Chemistry Crystallization Thin film |
| Zdroj: | Thin Solid Films. 492:153-157 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2005.07.114 |
| Popis: | The crystallization process of indium oxide thin films deposited by pulsed laser deposition was studied. X-ray diffraction was performed on amorphous films during real-time in situ annealing in vacuum at temperatures between 100 and 300 °C and a heating rate of 0.00847 °C/s. A fast crystallization was observed in the temperature range 165–210 °C. The crystallization kinetics obtained from the reaction equation shows activation energy of 2.31 eV, reaction order of 0.75 and reaction rate factor of 8.5 × 10 22 Hz. The structures of the in situ annealed films were compared with that of the films grown at different temperatures. The resistivity of the films is related to the structure, oxygen pressure and growth temperature. A low resistivity of 3.5 × 10 − 4 Ω cm, which increased with increasing temperature and oxygen pressure, was obtained at 100 °C and 2 Pa. The increase in the resistivity was due to a depletion of oxygen vacancies. The optical refractive index of the films decreases with changes in the deposition conditions, with an average value being 2.04. |
| Databáze: | OpenAIRE |
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