Investigation of Plasma Enhanced Chemical Vapor Deposition Chamber Mismatching by Photoluminescence and Raman Spectroscopy
| Autor: | Ryang Hyun Kim, Sung Ki Park, Jik Ho Cho, Toshikazu Ishigaki, Ki Sun Cho, Woo Sik Yoo, Kitaek Kang, Chun Ho Kang, Jung Geun Kim |
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| Rok vydání: | 2015 |
| Předmět: |
Work (thermodynamics)
Photoluminescence Materials science Semiconductor device fabrication business.industry Analytical chemistry Chemical vapor deposition Plasma Electronic Optical and Magnetic Materials symbols.namesake Plasma-enhanced chemical vapor deposition symbols Optoelectronics Wafer business Raman spectroscopy |
| Zdroj: | ECS Journal of Solid State Science and Technology. 4:P314-P318 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0161508jss |
| Popis: | Slight differences between supposedly identical process chambers are a well known problem in semiconductor manufacturing. In particular, individual plasma-aided process chambers are difficult to characterize and tune to match each other because plasma is a non-equilibrium state and can leave its “footprint” in subtle ways on a wafer. This process chamber mismatching phenomena was investigated in a dual chamber, commercial, high density plasma chemical vapor deposition system by monitoring SiO2/Si interface quality using multiwavelength room temperature photoluminescence and Raman spectroscopy. Effects on the SiO2/Si interface quality, from altering the gas flow pattern in the plasma process chamber, are also studied. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0161508jss] All rights reserved. |
| Databáze: | OpenAIRE |
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