Photoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers

Autor:	H.D. Geiler, Olaf Storbeck, W. Kürner
Rok vydání:	1999
Předmět:	Photoelasticity Materials science Silicon business.industry chemistry.chemical_element Laser Crystallographic defect law.invention Characterization (materials science) Stress (mechanics) chemistry law Nondestructive testing Forensic engineering Optoelectronics Wafer business
Zdroj:	MRS Proceedings. 591
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-591-249
Popis:	Process induced crystal defects in silicon wafers can be detected by their stress fields. The nondestructive photoelasticity based on laser polarimetry is applied to visualize the stress fields of temperture gradient induced lattice defects like sliplines or extended defect areas around boat marks. The quantitative evaluation of the defects allows their characterization by a specific danger potential for further evolution causing upstream problems in IC manufacturing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da821693d4bde2e2ea6156454220e496 https://doi.org/10.1557/proc-591-249 Zobrazit plný text záznamu Full text from SpringerLink