Hydrogenated amorphous silicon thin film anode for proton conducting batteries
| Autor: | Shuli Yan, Tiejun Meng, Kwo Young, Mark Ming-Cheng Cheng, Peng Zeng, David Beglau |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Hydrogen Renewable Energy Sustainability and the Environment Inorganic chemistry Energy Engineering and Power Technology chemistry.chemical_element 02 engineering and technology Electrolyte Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Anode Amorphous solid Hydrogen storage chemistry Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film 0210 nano-technology |
| Zdroj: | Journal of Power Sources. 302:31-38 |
| ISSN: | 0378-7753 |
| DOI: | 10.1016/j.jpowsour.2015.10.045 |
| Popis: | Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g−1 for the 38th cycle and retained 707 mAh g−1 after 500 cycles. A maximum discharge capacity of 3635 mAh g−1 was obtained at a lower discharge rate, 510 mA g−1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si–H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si–H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g−1. |
| Databáze: | OpenAIRE |
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