Plasma induced substrate damage in high dose implant resist strip process

Autor:	Lawrence Chiang Sheu, Yuan-Hung Chiu, Bor-Wen Chan, Han-Jan Tao, Baw-Ching Perng
Rok vydání:	2003
Předmět:	Materials science Ashing Resist business.industry Analytical chemistry Optoelectronics Substrate (printing) Inductively coupled plasma business Plasma-immersion ion implantation Plasma ashing NMOS logic PMOS logic
Zdroj:	2003 8th International Symposium Plasma- and Process-Induced Damage..
Popis:	In this communication we report our work on the ashing of post high dosage implant photoresist removal. Attention is focused on plasma damage to the silicon substrate, in addition to hard skin removal capabilities. An inductively coupled plasma (ICP) source is chosen for this study due to its capability of separate control of source and bias power, although our results are directly applicable to conventional plasma ashing facilities. Electrical data for both NMOS and PMOS devices are compared and correlated with the physical substrate damage, and suggestions for a residue-free process with minimum substrate damage are given.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da7cb3c8820eecef79d4b49df2782b09 https://doi.org/10.1109/ppid.2003.1200919 Zobrazit plný text záznamu