Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold
| Autor: | Sergei Ivanov, V. N. Jmerik, O. V. Alymov, A. V. Pashuk, M. R. Ainbund, L. V. Lapushkina, A. M. Mizerov, S. I. Petrov, A. N. Alekseev |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Technical Physics Letters. 38:439-442 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785012050033 |
| Popis: | Solar-blind UV photodetectors based on photocathodes are among the important applications of heterostructures based on group III metal nitride semiconductors. Related investigations are most frequently devoted to photocathodes with p-GaN active regions characterized by a long-wavelength sensitivity threshold at 360 nm. Since the detected radiation is mostly concentrated in the spectral range below 240–290 nm, corresponding displacement of the long-wavelength sensitivity threshold of photodetectors by using photocathodes with p-AlGaN active regions is a topical task. We present preliminary results on manufacturing photocathodes with a p-AlxGa1 − xN (x = 0.1 and 0.3) active region (possessing a long-wavelength sensitivity threshold at 330 and 300 nm, respectively). |
| Databáze: | OpenAIRE |
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