Simulation of picosecond domain time-of-flight experiments in a-Si:H
| Autor: | Jesse Maassen, Arthur Yelon, Louis-Andre Hamel |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Drift velocity
Field (physics) Chemistry business.industry Nanosecond Condensed Matter Physics Thermal conduction Electronic Optical and Magnetic Materials Time of flight Optics Electrical resistivity and conductivity Picosecond Materials Chemistry Ceramics and Composites Coherence (signal processing) Physics::Chemical Physics Atomic physics business |
| Zdroj: | Journal of Non-Crystalline Solids. 353:4779-4782 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2007.06.052 |
| Popis: | Using a model, developed earlier, of trap controlled conduction, which includes both the Meyer–Neldel rule and field assisted detrapping, we have simulated picosecond timescale drift mobility and drift velocity measurements in a-Si:H. This model is able to duplicate both the picosecond and nanosecond data, for all values of temperature and field, using one set of fixed parameters. We observe that under certain conditions, the drift mobility is field independent. Coherence between the picosecond and nanosecond results is shown. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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