Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

Autor:	Tatsuya Hinoki, Yutai Katoh, Takaaki Koyanagi, Kazumi Ozawa, Kazuya Shimoda, Sosuke Kondo
Rok vydání:	2014
Předmět:	Nuclear and High Energy Physics Materials science Microstructure Carbide Stress (mechanics) chemistry.chemical_compound Nuclear Energy and Engineering Creep chemistry Silicon carbide Stress relaxation General Materials Science Irradiation Composite material Deformation (engineering)
Zdroj:	Journal of Nuclear Materials. 455:73-80
ISSN:	0022-3115
Popis:	The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380–790 °C was estimated to be ∼1 × 10 −5 [MPa −1 dpa −1 ] at ∼0.1 dpa and 1 × 10 −7 to 1 × 10 −6 [MPa −1 dpa −1 ] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380–790 °C to 0.01–0.11 dpa.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da6c8dedebc76cb7f61447a97d7498f3 https://doi.org/10.1016/j.jnucmat.2014.04.018 Zobrazit plný text záznamu Full Text from ScienceDirect