400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
| Autor: | Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu, Sumi Krishnaswami, Dimos Katsis, James Richmond, Charles Scozzie, Bruce Geil |
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| Rok vydání: | 2006 |
| Předmět: |
Forward converter
Materials science business.industry Flyback converter Mechanical Engineering Buck–boost converter Ćuk converter Electrical engineering Schottky diode Condensed Matter Physics Rectifier Mechanics of Materials Boost converter General Materials Science Power semiconductor device business |
| Zdroj: | Materials Science Forum. :1445-1448 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.527-529.1445 |
| Popis: | This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode as the output rectifier. The converter was operated at 100 kHz with an input voltage of 200 volts DC and an output voltage of 400 volts DC. The efficiency was tested with an output loaded from 50 watts to 400 watts at baseplate temperatures of 25°C, 100°C, 150°C and 200°C. The results show the converter in all cases capable of operating at temperatures beyond the range possible with silicon power devices. While the converter efficiency was excellent in all cases, the SiC MOSFET and 6 Amp Schottky diode had the highest efficiency. Since the losses in a boost converter are dominated by the switching losses and the switching losses of the SiC devices are unaffected by temperature, the efficiency of the converter was effectively unchanged as a function of temperature. |
| Databáze: | OpenAIRE |
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