Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS?
| Autor: | Kensuke Taguchi, Hideki Haruguchi, Kazuhiko Hasegawa, Yasuo Ata, Eisuke Suekawa, Naoto Kaguchi, Yu Nakashima, Yasuhiro Kagawa, Tadaharu Minato |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Mode switching business Short circuit |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (UIS), as Si IGBT. Although VDS-ID (JD) locus of USCS is different from that of UIS, UIS and USCS (SCSOA) seem to have almost the same effects by taking account of the JD dependence. Moreover, UIS has the unique characteristic to detect the silent defects. |
| Databáze: | OpenAIRE |
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