Magnetic properties of the rare‐earth‐doped semiconductor GaEuN

Autor:	Hyungjin Bang, Akira Yanase, R. Asano, Katsuhiro Akimoto, N. Umesaki, Shuichi Emura, Hajime Asahi, Hidekazu Tanaka, T. Honma, Yi-Kai Zhou, Masahiko Hashimoto
Rok vydání:	2003
Předmět:	Condensed matter physics Chemistry business.industry Doping Ion X-ray absorption fine structure Condensed Matter::Materials Science Paramagnetism Magnetic anisotropy Semiconductor Ferromagnetism Condensed Matter::Strongly Correlated Electrons Absorption (chemistry) business
Zdroj:	physica status solidi (c). :2864-2868
ISSN:	1610-1634
DOI:	10.1002/pssc.200303516
Popis:	Magnetic properties of the rare-earth-doped III-nitride semiconductor Ga1−xEuxN (x = 0.02) were studied together with X-ray absorption fine structure (XAFS) measurements. Experimental results show that the GaEuN layer is not only paramagnetic originating from the non-magnetic 7F0 ground level of trivalent Eu ions, but exhibits also ferromagnetic-like behaviour with easy axis perpendicular to the sample plane. This ferromagnetic component seen also at 300 K seems to be related to divalent Eu ions. The observed magnetic behaviour was also studied theoretically, by introducing a c-axis oriented molecular-field term that acts via the spin-polarized valence band of GaN. This result suggests that Eu ions interact with other Eu ions through the RKKY-type interaction. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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