Investigation of GaAs growth from Bi-based melts for solar cells

Autor:	W. Wettling, Andreas W. Bett, A. Baldus, O.V. Sulima
Rok vydání:	1995
Předmět:	Dopant Chemistry Inorganic chemistry Analytical chemistry Liquid phase chemistry.chemical_element Crystal growth Condensed Matter Physics Epitaxy Bismuth Inorganic Chemistry Materials Chemistry Thin film Solvent effects Solubility
Zdroj:	Journal of Crystal Growth. 146:305-309
ISSN:	0022-0248
DOI:	10.1016/0022-0248(94)00502-8
Popis:	Bismuth was studied as an alternative to Ga and Sn solvents for liquid phase epitaxy of GaAs. GaAs solubility in Bi was measured at T < 600°C. Sn and Zn were studied as dopants for the growth of n- and p-GaAs, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da40eab173fd193ac644a6560dbffa3f https://doi.org/10.1016/0022-0248(94)00502-8 Zobrazit plný text záznamu Full Text from ScienceDirect