5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES
| Autor: | Remis Gaska, Grigory Simin, Michael Shur |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Terahertz radiation business.industry Transistor Heterojunction Gallium nitride Space charge Electronic Optical and Magnetic Materials Power (physics) law.invention chemistry.chemical_compound chemistry Hardware and Architecture law Electric field Optoelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | International Journal of High Speed Electronics and Systems. 19:7-14 |
| ISSN: | 1793-6438 0129-1564 |
| DOI: | 10.1142/s0129156409006047 |
| Popis: | We present a novel approach to achieve terahertz-range cutoff frequencies and maximum frequencies of operation of GaN based heterostructure field-effect transistors (HFETs) at relatively high drain voltages. Strong short-channel effects limit the frequency of operation and output power in conventional geometry GaN HFETs. In this work, we propose a novel device with two additional independently biased electrodes controlling the electric field and space-charge close to the gate edges. As a result, the effective gate length extension due to short channel effects is diminished and electron velocity in the device channel is increased. Our simulations show that the proposed five-terminal HFET allows achieving fT=1.28 THz and fmax= 0.815 THz at the drain voltages as high as 12 V. Hence, this device opens up a new approach to designing THz transistor sources. |
| Databáze: | OpenAIRE |
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