Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy

Autor:	Stanislav Popelka, Eric Pertermann, Rc Sharma, Franz-Josef Niedernostheide, Hans Peter Felsl, Pavel Hazdra, Josef Lutz, Hans-Joachim Schulze
Rok vydání:	2015
Předmět:	Admittance spectroscopy Materials science Deep-level transient spectroscopy business.industry Focused Impedance Measurement Schottky barrier Optoelectronics Schottky diode Radiation business Metal–semiconductor junction
Zdroj:	2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
Popis:	We show that the technique of Frequency Resolved Admittance Spectroscopy (FRAS) allows the identification of deep traps with reduced measurement effort compared to Deep Level Transient Spectroscopy (DLTS). This is shown by the analysis of radiation defects introduced in n-type 4H-SiC 1700V Schottky diodes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da19f1a69443a4e7e3c9210b0782e8ec https://doi.org/10.1109/epe.2015.7311785 Zobrazit plný text záznamu