Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers
| Autor: | V. F. Machulin, V. P. Kladko, Andrey Sarikov, S.O. Zlobin, V.G. Litovchenko, Igor Lisovskyy, M. V. Voitovych |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Annealing (metallurgy) Metallurgy Analytical chemistry Oxide Infrared spectroscopy chemistry.chemical_element Condensed Matter Physics Thermal diffusivity Oxygen Atomic and Molecular Physics and Optics Oxygen precipitation chemistry.chemical_compound chemistry General Materials Science Wafer Solubility |
| Zdroj: | Solid State Phenomena. :279-282 |
| ISSN: | 1662-9779 |
| Popis: | In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data. |
| Databáze: | OpenAIRE |
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