Study of hot-carrier-induced photon emission from 90nm Si MOSFETs
| Autor: | Y. Weizman, M. Borenshtein, S. Sade, M. Gurfinkel, Y. Fefer, Yoram Shapira, A. Margulis |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Astrophysics::High Energy Astrophysical Phenomena Transistor General Physics and Astronomy Astrophysics::Cosmology and Extragalactic Astrophysics Surfaces and Interfaces General Chemistry Substrate (electronics) Electroluminescence Condensed Matter Physics Emission intensity Surfaces Coatings and Films law.invention law Microscopy MOSFET Optoelectronics Field-effect transistor business Luminescence Astrophysics::Galaxy Astrophysics |
| Zdroj: | Applied Surface Science. 248:62-65 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2005.03.033 |
| Popis: | Measurements of photon emission and substrate current in metal-oxide-semiconductor field effect transistors at various temperatures have been carried out using electrical and NIR microscopy. The results received at room temperature have extended the correlation between the substrate current and the photon emission, which was previously found in the visible, to the NIR range. On the basis of this correlation, an empirical model based on the substrate current was used to describe the static emission intensity dependence on the transistor bias. Temperature resolved measurements show that the correlation between emission intensity and the substrate current appears to be coincidental. |
| Databáze: | OpenAIRE |
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