Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

Autor:	Tae Sung Kang, Ja Hyun Koo, Jin Pyo Hong
Rok vydání:	2012
Předmět:	Materials science business.industry Transistor General Physics and Astronomy Partial pressure law.invention Active layer Active matrix Amorphous solid Threshold voltage law Thin-film transistor Sputtering Optoelectronics business
Zdroj:	Journal of the Korean Physical Society. 60:1386-1389
ISSN:	1976-8524 0374-4884
DOI:	10.3938/jkps.60.1386
Popis:	The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZOx (oxygen-ion-poor region) and a-IGZOy (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm2/Vsec, a threshold voltage (VT) of 16.5 V, and ΔVT shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::da02455cae24d97aa2ffd3aef122116b https://doi.org/10.3938/jkps.60.1386 Zobrazit plný text záznamu Full text from SpringerLink