MBE GaN grown on (101) NdGaO3 substrates
| Autor: | A. Wagner, Sergei Ivanov, N.F. Kartenko, A.A. Toropov, Bo Monemar, V.V. Mamutin |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Photoluminescence Scanning electron microscope business.industry Mechanical Engineering Gallium nitride Gallate Condensed Matter Physics Microstructure chemistry.chemical_compound Crystallography chemistry Mechanics of Materials Sapphire Optoelectronics General Materials Science business Luminescence Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 59:56-59 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(98)00362-6 |
| Popis: | We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO 3 ) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity–voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO 3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former. |
| Databáze: | OpenAIRE |
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