| Autor: |
Kenichi Tokano, W. Saitoh, Hiromichi Ohashi, T. Ogura, Ichiro Omura |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics. |
| DOI: |
10.1109/ispsd.2002.1016164 |
| Popis: |
A novel low on-resistance Schottky barrier diode (SBD) structure with a p-buried floating layer is proposed and demonstrated by fabricating 300V-SBDs using a burying epitaxial growth technique. The fabricated SBDs realize 50% reduction in chip area and show the possibility of a higher SBD blocking voltage of over 200 V thanks to the reduction of the on-resistance. This is the first paper describing fabrication of charge compensated SBDs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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