Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition
| Autor: | Adrian Ildefonso, John D. Cressler, Ani Khachatrian, Joel M. Hales, Stephen P. Buchner, Nicolas J.-H. Roche, Zachary E. Fleetwood, Dale McMorrow, Jeffrey H. Warner, Veronique Ferlet-Cavrois |
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| Rok vydání: | 2018 |
| Předmět: |
Physics
Nuclear and High Energy Physics Range (particle radiation) 010308 nuclear & particles physics Charge density Charge (physics) Electrostatic induction 01 natural sciences Ion Semiconductor laser theory 010309 optics Nuclear Energy and Engineering 0103 physical sciences Electrical and Electronic Engineering Atomic physics Absorption (electromagnetic radiation) Excitation |
| Zdroj: | IEEE Transactions on Nuclear Science. 65:1724-1733 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | Using a laser-equivalent linear energy transfer (LET) approach, strong correlation is found for collected charge following heavy-ion and pulsed-laser excitation in a bulk diode device. By significantly modifying the size of the charge distribution generated by one- and two-photon absorption compared to the depth of the sensitive region, charge deposition in a large variety of device technologies is mimicked. Nearly one-to-one correlation is found with heavy-ion charge collection, independent of the laser focusing geometry or magnitude of LET. Finally, this approach is applied to the previous studies where empirical laser-ion correlations on highly scaled technologies were proposed. These correlations are reproduced through direct calculation of the laser-equivalent LET, and outstanding observations are explained despite the sensitive areas of these devices being up to 1000 times smaller than the laser-deposited charge profile. In total, these studies suggest that this quantitative methodology for laser-ion correlation is broadly applicable for a range of complex device technologies. |
| Databáze: | OpenAIRE |
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