| Autor: |
K. Tomiyasu, Y. Fukushima, Kenshi Tada, John W. Hartzell, Yasuyuki Ogawa, Y. Takafuji, Steven R. Droes, E. Kobayashi, S. Matsumoto, Y. Watanabe, Michiko Takei, Apostolos T. Voutsas, H. Kobayashi |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
2009 IEEE International Electron Devices Meeting (IEDM). |
| Popis: |
Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm × 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS-TFT is comparable with that of SOI, while PMOS-TFT shows some degradation of sub-threshold swing. Transferred CMOS show high performance and shift register function at 400 MHz (clock frequency) with power supply of 3 V. Transferred die size was 15 mm × 15 mm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
