| Autor: |
Y. G. Chai, P.D. Wright, G.A. Antypas |
| Rok vydání: |
1979 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 26:1220-1227 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/t-ed.1979.19582 |
| Popis: |
InGaPAs-InP double-heterojunction (DH) high-radiance LED's (λ ∼ 1.05-1.3 µm) have been fabricated by liquid-phase epitaxy (LPE) at constant temperature. The crystal growth procedure is described and the influence of InP substrate crystalline perfection is discussed. LED's with a high-radiance geometry suitable for coupling to an optical fiber have been fabricated. The four-layer double-heterostructure LED's have low forward-biased resistances. Typical external quantum efficiencies of ∼1.5 percent and narrow emission linewidths (∼56 nm, typical), have been measured for LED's (λ ∼ 1.08 µm) with an InGaPAs active layer thickness of 1.6 µm and an active layer carrier concentration of N_{A} - N_{D} \approx 2.8 \× 10^{16} cm-3. The dependence of LED emission linewidth upon active layer doping is reported. Transient measurements show that the LED rise time is dependent upon current density for high-injection conditions. Preliminary lifetest results demonstrate only slight LED degradation after operation at 50 and 70°C for times up to ∼3500 h. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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