Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature

Autor:	Chun-Hsing Lin, Chun-Ching Wu, Fu-Chun Tsai, Day-Shan Liu
Rok vydání:	2006
Předmět:	Materials science Metallurgy Oxide Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Zinc Sputter deposition Condensed Matter Physics Microstructure Surfaces Coatings and Films Amorphous solid Indium tin oxide chemistry.chemical_compound chemistry Atomic ratio Crystallite
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:694-699
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.2194030
Popis:	X-ray diffraction coupled with atomic force microscopy measurements were employed to investigate the cosputtered oxide films at various zinc content [Zn∕(Zn+In)at.%] atomic ratios prepared at room temperature using rf cosputtering indium tin oxide (ITO) and zinc oxide (ZnO) targets simultaneously. The crystalline structure of a pure ITO film is polycrystalline with obvious diffraction peaks of (222) and (400). As the atomic ratio reaches 26%, the cosputtered oxide film evolves from a polycrystalline ITO structure into an amorphouslike ZnkIn2Ok+3 structure. This structure also dominates the cosputtered oxide films at the atomic ratios raging from 26% to 54%. The formation of amorphouslike ZnkIn2O3+k structures is found to markedly reduce the associated film resistivity and performs a superior surface uniformity. At an atomic ratio of 60%, a diffraction peak identifies as ZnO (100) phase appears to pile on the original amorphous domain. This phase is attributed to the substitution of In3+ sites in the ITO s...
Databáze:	OpenAIRE
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