Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
| Autor: | Chih-Hao Lee, Meng-Chyi Wu, Gou-Chung Chi, Pao-Ling Koh, Chien-Cheng Yang |
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| Rok vydání: | 1999 |
| Předmět: |
Electron mobility
Photoluminescence Materials science Analytical chemistry Mineralogy Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Full width at half maximum Materials Chemistry Sapphire Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film |
| Zdroj: | Journal of Electronic Materials. 28:1096-1100 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0244-2 |
| Popis: | GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H2 on the upper stream to NH3 on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H2 flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H2/NH3 flow ratio of 1.0, we can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emis-sion in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm2/V-s and concentration of 1 × 1018 cm−3 at 300 K. |
| Databáze: | OpenAIRE |
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