| Autor: |
Takuya Hoshii, Kentaro Matsuura, Hitoshi Wakabayashi, Takumi Ohashi, Haruki Tanigawa, Masaya Hamada, Kazuo Tsutsui, Kuniyuki Kakushima, Iriya Muneta, Takuro Sakamoto |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). |
| Popis: |
Layered MoS 2 film was formed on a SiO 2 substrate by sputtering and Al 2 O 3 film was deposited as passivation film on the MoS 2 film, an annealing was performed in sulfur atmosphere in order to compensate sulfur defects and improve crystallinity. By annealing MoS 2 film in sulfur atmosphere, crystallinity was improved by sulfur compensation even through Al 2 O 3 film, and Hall-effect mobility of the MoS 2 film increased than that prior to annealing. The high Hall-effect mobility values of 300 and 100 cm2 V-1s-1 were remarkably achieved without and with 3-nm passivation film, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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