The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs

Autor:	M. R. Melloch, Anthony J. Lochtefeld, J. C. P. Chang, E. S. Harmon
Rok vydání:	1996
Předmět:	Materials science Physics and Astronomy (miscellaneous) Electron capture Annealing (metallurgy) Radiochemistry chemistry.chemical_element Electron Trapping Crystallographic defect chemistry Chemical physics Recombination Arsenic Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 69:1465-1467
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.116909
Popis:	GaAs epilayers were grown with a wide range of excess arsenic concentrations and subjected to various anneals to study the role of the point defects and arsenic precipitates in carrier trapping and recombination. Prior to anneal, the point defects rapidly trap photogenerated electrons and holes—usually on subpicosecond time scales. However, full electron‐hole recombination occurs on a significantly longer time scale. After anneal, the full electron‐hole recombination lifetime appears to be greatly reduced, indicating that the arsenic precipitates play a significant role.
Databáze:	OpenAIRE
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