Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies
| Autor: | S.F. Lim, S.Q. Zhang, P.R. Verma, W.B. Loh, K.C. Leong, B.G. Oon, C.H. Cheng, S.F. Chu, Y.K. Yoo, K.W. Chew, K.K. Khu, N.G. Toledo, Y.W. Poh, Chit Hwei Ng, T. Zhou |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY BiCMOS Inductor law.invention Capacitor CMOS law visual_art Electronic component Hardware_INTEGRATEDCIRCUITS Electronic engineering visual_art.visual_art_medium System on a chip business Electronic circuit |
| Zdroj: | 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks. |
| DOI: | 10.1109/rfit.2005.1598888 |
| Popis: | The choice of technology for today's mixed-signal/RF system-on-chip (SOC) designs has been driven by the performance enhancements and cost advantage derived from scaled CMOS technologies. This paper discusses the performance improvements of RF transistors resulting from technology downscaling. Comparisons between scaled RF CMOS and SiGe BiCMOS technologies to highlight the benefits of employing SiGe HBT devices in certain applications are made. Other technology enablements discussed include accurate, scalable models and statistical models to address the need for design flexibility and robust manufacturing. Thereafter the introduction of high Q inductors, high density capacitors and varactors as basic passive components for RF circuits are discussed. Analog requirements such as mismatch, temperature linearity and voltage linearity are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|