One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

Autor:	Dae Hwan Kim, Woo Sik Choi, Sung-Jin Choi, Dong-Uk Kim, Yoon Kim, Jun Tae Jang, Dong Myong Kim
Rok vydání:	2020
Předmět:	Hardware_MEMORYSTRUCTURES Materials science Amorphous indium gallium zinc oxide business.industry Transistor Memristor Electronic Optical and Magnetic Materials law.invention Neuromorphic engineering law Materials Chemistry Electrochemistry Optoelectronics business
Zdroj:	ACS Applied Electronic Materials. 2:2837-2844
ISSN:	2637-6113
DOI:	10.1021/acsaelm.0c00499
Popis:	Various memristor-based synaptic devices have been proposed for implementing a neuromorphic system. However, memristor devices typically suffer from various inherent problems such as nonlinearity a...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d9d85b5151bca702350dbb9b2249fb65 https://doi.org/10.1021/acsaelm.0c00499 Zobrazit plný text záznamu