| Popis: |
One of the most used methods to investigate electronic-noise in semiconductor two-terminal structures at high frequencies (f ≥ 0.5 GHz) is the measurement of the noise temperature, Tn(f). It consists in the determination of the “black-body” equivalent-temperature under the condition that, within a given frequency bandwidth Δf centered on f the thermal noise-power generated by the “black-body” coincides with the maximum noise-power, Pn, generated by the structure and extracted in a matched output-circuit1. Then, by definition it is: $${T_n}\left( f \right) = \frac{{{P_n}\left( f \right)}}{{{k_B}\Delta f}}$$ (1) where k B is the Boltzmann constant. The aim of this work is to calculate the frequency and voltage dependence of the noise temperature in a n+nn+ GaAs diode at a kinetic level, thus allowing for a direct comparison with experimental data2. |
